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55nm MPW in TSMC By Quotes 2018/11/19 2019/02/28
55nm Mixed signal Process MPW for Analog circuit. Introduction
55nm MPW By Quotes 2018/07/12 2018/12/30
 Foundry:                   (1) UMC (2) TSMC (3) GLOBALFOUNDRIES (4) SMIC Application :                    Power Line Communication   Chip size :                    7mm^2 Introduction
Delta sigma DAC 24bit 20000 Points 2018/07/05 2018/11/30
The IP has stereo digital-to-analog output systems including interpolation, multibit D/A conversion and  output  analog  filtering .  The IP supports major audio data interface formats.  Individual  devices  differ  only  in  the  supported interface format. The IP is based on a fourth-order multibit delta-sigma modulator with a linear analog low-pass filter. This IP also includes autospeed mode detection using  both  sample  rate  and  master  clock  ratio  as  a method of auto-selecting sampling rates between 2 kHz and 200 kHz. The IP contains on-chip digital deempha-sis, operates from a single +3.3 V or +5 V power supply,and requires minimal support circuitry. These features are  ideal  for  DVD  players  &  recorders,  digital  televisions,  home  theater  and  set  top  box  products,  and automotive audio systems. Introduction
20V P-Channel MOSFET By Quotes 2017/12/28 2018/02/28
Features -20V/ -4A  RDS(ON) = 35 mΩ(typ.) @ VGS =-4.5V High Cell Desity for low Rds(on) ESD Rating:2000V HBM Fast switching and reverse body recovery 150℃  operating temperature Halogen Device Available Request : 50 pcs of wafer/Month   Introduction
20V N-Channel MOSFET(10KK/M) By Quotes 2017/12/28 2018/02/28
Features 24V/ 6A   RDS(ON) = 18 mΩ(typ.) @ VGS =4.5V High Cell Desity for low Rds(on) ESD Rating:2000V HBM Fast switching and reverse body recovery 150℃  operating temperature Halogen Device Available Request : 1. 10KK  IC/Month  2. 50 pcs of wafer/Month Introduction
20V P-Channel Enhancement Mode Power MOSFET By Quotes 2017/12/25 2018/03/30
General Features VDS  = -20V,ID  =-4A             RDS(ON)  < 60mΩ @ VGS =-2.5V             RDS(ON)  < 45mΩ @ VGS =-4.5V             ESD Rating: 2500V HBM  High Power and current handing capability Application PWM application Load switch MOQ : 75 pcs of wafer/month Introduction
30V N-Channel Enhancement Mode Power MOSFET By Quotes 2017/12/25 2018/03/30
General Features VDS  = 30V,ID  = 5.8A              RDS(ON)  < 59mΩ @ VGS =2.5V              RDS(ON)  < 45mΩ @ VGS =4.5V              RDS(ON)  < 41mΩ @ VGS =10V High power and current handing capability MOQ : 50 pcs of wafer/month  Application  Power management Load switch PWM applications Introduction
20V N-Channel Enhancement Mode Power MOSFET By Quotes 2017/12/22 2018/03/30
General Features VDS  = 20V,I D  =6A             RDS(ON)  < 30mΩ @ VGS =2.5V              RDS(ON)  < 24mΩ @ VGS =4.5V              ESD Rating: 2000V HBM            High Power and current handing capability     MOQ : 75 pcs of wafer/month Introduction
8 bit MCU Chip By Quotes 2017/11/04 2017/12/29
8 bit MCU Die Feature  1. 6 IO  2. Internal OSC 3. Power range 2.0V~5.5V Estimate : 2kk/Month  Introduction
Packaging in SOP8 By Quotes 2016/09/04 2017/03/01
Description: Chip Function Description: This chip is a RF Receiver with the RF Bandwidth between 315 MHz and 433 MHz.   Packaging Description: 1. Packaging Type: SOP8  Introduction
Query Result
Wanted μIP Wanted Payment Post Date Deadline
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